IndiumV3, Main, Repository, bibRecord, 002E27

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Identifieur interne : 002E27 ( Main/Repository ); précédent : 002E26; suivant : 002E28

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Auteurs : RBID : Pascal:11-0330582

Descripteurs français

Pascal (Inist)
- Mécanisme croissance, Recuit, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Photoluminescence, Autoassemblage, Largeur raie, Croissance sélective, Formation motif, Epitaxie jet moléculaire, InAs, Substrat GaAs, 6855A, 8105E, 8107T, 8535B.

English descriptors

KwdEn :
- Annealing, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Line widths, Molecular beam epitaxy, Nanostructured materials, Patterning, Photoluminescence, Quantum dots, Selective growth, Self-assembly.

Abstract

In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81 μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth and annealing of InAs quantum dots on pre-structured GaAs substrates</title>
<author><name sortKey="Helfrich, M" uniqKey="Helfrich M">M. Helfrich</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hu, D Z" uniqKey="Hu D">D. Z. Hu</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hendrickson, J" uniqKey="Hendrickson J">J. Hendrickson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Optical Sciences, University of Arizona</s1>
<s2>Tucson, AZ 85721</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>14 aut.</sZ>
<sZ>15 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Tucson, AZ 85721</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gehl, M" uniqKey="Gehl M">M. Gehl</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Optical Sciences, University of Arizona</s1>
<s2>Tucson, AZ 85721</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>14 aut.</sZ>
<sZ>15 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Tucson, AZ 85721</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="R Lke, D" uniqKey="R Lke D">D. R Lke</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Groger, R" uniqKey="Groger R">R. Gröger</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institute of Nanotechnology (INT) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>6 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Litvinov, D" uniqKey="Litvinov D">D. Litvinov</name>
<affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Laboratorium für Elektronenmikroskopie (LEM), Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Linden, S" uniqKey="Linden S">S. Linden</name>
<affiliation wicri:level="3"><inist:fA14 i1="05"><s1>Physikalisches Institut, University of Bonn</s1>
<s2>53115 Bonn</s2>
<s3>DEU</s3>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region>
<region type="district" nuts="2">District de Cologne</region>
<settlement type="city">Bonn</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Wegener, M" uniqKey="Wegener M">M. Wegener</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Gerthsen, D" uniqKey="Gerthsen D">D. Gerthsen</name>
<affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Laboratorium für Elektronenmikroskopie (LEM), Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Schimmel, T" uniqKey="Schimmel T">T. Schimmel</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institute of Nanotechnology (INT) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>6 aut.</sZ>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hetterich, M" uniqKey="Hetterich M">M. Hetterich</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kalt, H" uniqKey="Kalt H">H. Kalt</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Khitrova, G" uniqKey="Khitrova G">G. Khitrova</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Optical Sciences, University of Arizona</s1>
<s2>Tucson, AZ 85721</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>14 aut.</sZ>
<sZ>15 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Tucson, AZ 85721</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gibbs, H M" uniqKey="Gibbs H">H. M. Gibbs</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Optical Sciences, University of Arizona</s1>
<s2>Tucson, AZ 85721</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>14 aut.</sZ>
<sZ>15 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Tucson, AZ 85721</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Schaadt, D M" uniqKey="Schaadt D">D. M Schaadt</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bade-Wurtemberg</region>
<region type="district" nuts="2">District de Karlsruhe</region>
<settlement type="city">Karlsruhe</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0330582</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0330582 INIST</idno>
<idno type="RBID">Pascal:11-0330582</idno>
<idno type="wicri:Area/Main/Corpus">002D72</idno>
<idno type="wicri:Area/Main/Repository">002E27</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Line widths</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Patterning</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Selective growth</term>
<term>Self-assembly</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term>
<term>Recuit</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Photoluminescence</term>
<term>Autoassemblage</term>
<term>Largeur raie</term>
<term>Croissance sélective</term>
<term>Formation motif</term>
<term>Epitaxie jet moléculaire</term>
<term>InAs</term>
<term>Substrat GaAs</term>
<term>6855A</term>
<term>8105E</term>
<term>8107T</term>
<term>8535B</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81 μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>323</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Growth and annealing of InAs quantum dots on pre-structured GaAs substrates</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>HELFRICH (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HU (D. Z.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HENDRICKSON (J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>GEHL (M.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>RÜLKE (D.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>GRÖGER (R.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>LITVINOV (D.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>LINDEN (S.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>WEGENER (M.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>GERTHSEN (D.)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>SCHIMMEL (T.)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>HETTERICH (M.)</s1>
</fA11>
<fA11 i1="13" i2="1"><s1>KALT (H.)</s1>
</fA11>
<fA11 i1="14" i2="1"><s1>KHITROVA (G.)</s1>
</fA11>
<fA11 i1="15" i2="1"><s1>GIBBS (H. M.)</s1>
</fA11>
<fA11 i1="16" i2="1"><s1>SCHAADT (D. M)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>12 aut.</sZ>
<sZ>13 aut.</sZ>
<sZ>16 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>College of Optical Sciences, University of Arizona</s1>
<s2>Tucson, AZ 85721</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>14 aut.</sZ>
<sZ>15 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institute of Nanotechnology (INT) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>6 aut.</sZ>
<sZ>11 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Laboratorium für Elektronenmikroskopie (LEM), Karlsruhe Institute of Technology (KIT)</s1>
<s2>76131 Karlsruhe</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Physikalisches Institut, University of Bonn</s1>
<s2>53115 Bonn</s2>
<s3>DEU</s3>
<sZ>8 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1>
<s2>Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Hambourg</s1>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Bochum</s1>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>187-190</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000190370280460</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>20 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0330582</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81 μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F18</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Recuit</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Annealing</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Autoassemblage</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Self-assembly</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Largeur raie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Line widths</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Croissance sélective</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Selective growth</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Formation motif</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Patterning</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>227</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1>
<s2>16</s2>
<s3>Berlin DEU</s3>
<s4>2010-08-22</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

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